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Brand Name : Crystro
Model Number : CR200629-02
Certification : SGS/ROHS
Place of Origin : China
MOQ : 1pc
Payment Terms : T/T, Western Union, MoneyGram, Paypal
Supply Ability : 5000pcs per month
Delivery Time : 4-5weeks
Packaging Details : Transparent clean box
Material : SGGG
Flatness : <1/10 wave at 633nm
Name : Subsituted Gadolinium Gallium Garnet SGGG
Crystal growth method : Czochralski
Orientation : (100), (111) +/-0.5°
Size : 10 mm x 10 mm x 0.5 mm
Diameter Tolerance : ±0.05mm
Length Tolerance : ±0.2mm
YIG SGGG Substrates Wafer
SGGG single crystal, substituted gadolinium gallium garnet is grown by Czochralski method .
SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films,is good material for YIG,BiYIG,GdBIG.
Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.
Properties:
Crystal properties | ||
Crystal growth method | Czochralski | |
Crystal growth orientation | (100), (111) | |
Maximum size | 3 inch diameter | |
Variations | Dopands on request | |
Crystallographic properties | ||
Crystallographic structure | Cubic | |
a = 12.383 Å | ||
a = 12.505 Å SGGG | ||
Mineralogical | Garnet | |
Twinning structure | Perfect | |
Colour | Colourless / Brownish SGGG | |
Physical properties | ||
Density | 7.09 g/cm3 | |
Melting point | 1730 °C | |
Hardness | 7.5 (Mohs) | |
Dielectric constant | 30 | |
Dielectric loss tangent (10 GHz) | ca. 3.0 * 10_4 | |
Optical properties | ||
Transmission range | 0.3 to 7.0 mm | |
Refraction index: | nd = 1.9708 at 577 nm |
CRYSTRO supply GGG crystal with:
Orientation | <111> <100> within ±15 arc min |
Wave Front Distortion | <1/4 wave@632 |
Diameter Tolerance | ±0.05mm |
Length Tolerance | ±0.2mm |
Chamfer | 0.10mm@45º |
Flatness | <1/10 wave at 633nm |
Parallelism | < 30 arc Seconds |
Perpendicularity | < 15 arc min |
Surface Quality | 10/5 Scratch/Dig |
Clear Apereture | >90% |
Large Dimensions of Crystals | 2.8-76 mm in diameter |
Application:
Substitute GGG
YIG,BIG epitaxy film;
Microwave devices;
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YIG SGGG Substrates Wafer Images |